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| SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS ISSUE 1 - NOVEMBER 1995 C1 C1 C2 C2 PARTMARKING DETAIL T694 B1 E1 B2 E2 ZDT694 SM-8 (8 LEAD SOT223) ABSOLUTE MAXIMUM RATINGS. PARAMETER Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Peak Pulse Current Continuous Collector Current Operating and Storage Temperature Range SYMBOL VCBO VCEO VEBO ICM IC Tj:Tstg VALUE 120 120 5 1 0.5 -55 to +150 UNIT V V V A A C THERMAL CHARACTERISTICS PARAMETER Total Power Dissipation at Tamb = 25C* Any single die on Both die on equally Derate above 25C* Any single die on Both die on equally Thermal Resistance - Junction to Ambient* Any single die on Both die on equally SYMBOL Ptot VALUE 2.25 2.75 18 22 55.6 45.5 UNIT W W mW/ C mW/ C C/ W C/ W * The power which can be dissipated assuming the device is mounted in a typical manner on a PCB with copper equal to 2 inches square. 3 - 342 ZDT694 ELECTRICAL CHARACTERISTICS (at Tamb = 25C). PARAMETER Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current SYMBOL V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO MIN. 120 120 5 0.1 0.1 0.25 0.5 0.9 0.9 500 400 150 130 200 9 80 2900 MHz pF pF ns ns TYP. MAX. UNIT V V V A A CONDITIONS. IC=100A IC=10mA* IE=100A VCB=100V VEB=4V IC=0.1A, IB=0.5mA* IC=0.4A, IB=5mA* IC=1A, IB=10mA* IC=1A, VCE=2V* IC=100mA, VCE=2V* IC=200mA, VCE=2V* IC=400mA, VCE=2V* IC=50mA, VCE=5V f=50MHz VEB=0.5V, f=1MHz VCB=10V, f=1MHz IC=100mA, IB1=10mA IB2=10mA, VCC=50V Collector-Emitter Saturation VCE(sat) Voltage Base-Emitter Saturation Voltage Base-Emitter Turn-On Voltage Static Forward Current Transfer Ratio Transition Frequency Input Capacitance Output Capacitance Switching Times VBE(sat) VBE(on) hFE V V V V fT Cibo Cobo ton toff *Measured under pulsed conditions. Pulse width=300s. Duty cycle 2% 3 - 343 ZDT694 TYPICAL CHARACTERISTICS IC/IB=200 0.8 IC/IB=100 IC/IB=10 Tamb=25C 0.8 -55C +25C +100C +175C IC/IB=100 - (Volts) 0.6 - (Volts) V 0.01 0.1 1 10 0.6 0.4 0.4 V 0.2 0.2 0 0 0.01 0.1 1 10 I+ - Collector Current (Amps) I+ - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 +100C +25C -55C VCE=2V 1.5K 1.6 1.4 1.2 1.0 0.8 0.6 - Normalised Gain -55C +25C +100C +175C IC/IB=100 1K 500 - Typical Gain V h 0.4 0.2 0 0.01 0.1 1 10 0 0.01 0.1 1 10 h 0 I+ - Collector Current (Amps) - (Volts) I+ - Collector Current (Amps) hFE v IC VBE(sat) v IC 1.6 1.4 -55C +25C +100C +175C VCE=2V - (Volts) V 1.2 1.0 0.8 0.6 0.4 0.2 0 0 0.01 0.1 1 10 I+ - Collector Current (Amps) VBE(on) v IC 3 - 344 |
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